MIL-PRF-914C
3.14 Low temperature operation. When networks are tested as specified in 4.8.9, there shall be no evidence of
mechanical damage. The change in resistance between initial and final measurements shall not exceed the values
specified:
Delta R
Resistance ratio
Characteristic
M
±(0.50 percent +0.01 ohm)
K
±(0.25 percent +0.01 ohm)
H
±(0.10 percent +0.01 ohm)
C, R and V
±(0.10 percent +0.01 ohm)
±0.02 percent
3.15 Short-time overload. When networks are tested as specified in 4.8.10, there shall be no evidence of arcing,
burning, or charring. The change in resistance between initial and final measurements shall not exceed the values
specified:
Delta R
Resistance ratio
Characteristic
M
±(0.50 percent +0.01 ohm)
K
±(0.25 percent +0.01 ohm)
H
±(0.10 percent +0.01 ohm)
C, R and V
±(0.10 percent +0.01 ohm)
±0.02 percent
3.16 Adhesion (not applicable to gullwing packages). When networks are tested as specified in 4.8.11, there shall
be no evidence of mechanical damage.
3.17 Terminal strength (not applicable to Leadless Chip Carriers (LCC)). When networks are tested as specified in
4.8.12, there shall be no evidence of breaking or loosening of terminals from the network form, or chipping of coating.
The change in resistance between initial and final measurements shall not exceed the values specified:
Delta R
Resistance ratio
Characteristic
K, M and H
±(0.25 percent +0.01 ohm)
C, R, and V
±(0.10 percent +0.01 ohm)
±0.03 percent
3.18 Dielectric withstanding voltage. When networks are tested as specified in 4.8.13, there shall be no
mechanical damage, arcing, or breakdown. The leakage current shall not exceed 1 milliampere (mA).
3.19 Insulation resistance. When networks are tested as specified in 4.8.14, the insulation resistance shall not be
less than 10,000 megohms.
3.20 Resistance to soldering heat. When networks are tested as specified in 4.8.15, there shall be no evidence of
mechanical damage, no demetallization, or leaching. The change in resistance between initial and final measurements
shall not exceed the values specified:
Characteristic
Delta R
Resistance ratio
K, M and H
±(0.25 percent +0.01 ohm)
C, R, and V
±(0.25 percent +0.01 ohm)
±0.02 percent
3.21 Moisture resistance. When networks are tested as specified in 4.8.16, there shall be no evidence of
mechanical damage. The change in resistance between initial and final measurements shall not exceed the values
specified:
Delta R
Resistance ratio
Characteristic
K, and M
±(0.50 percent +0.01 ohm)
H
±(0.40 percent +0.01 ohm)
C, R, and V
±(0.20 percent +0.01 ohm)
±0.02 percent
Additionally, the dielectric withstanding voltage shall be as specified in 3.18 and the insulation resistance shall be 100
megohms minimum.
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